| PART |
Description |
Maker |
| STP10NK60Z STP10NK60ZFP STB10NK60Z STB10NK60Z-1 ST |
N-CHANNEL 600V-0.65ohm-10A TO-220/FP/D2PAK/I2PAK/TO-247 Zener-Protected SuperMESH?┬ower MOSFET
N-CHANNEL 600V-0.65ohm-10A TO-220/FP/D2PAK/I2PAK/TO-247 Zener-Protected SuperMESH⑩Power MOSFET N沟道600V.65ohm - 10A条TO-220/FP/D2PAK/I2PAK/TO-247齐纳保护SuperMESH⑩功率MOSFET
N-CHANNEL Power MOSFET
N-CHANNEL 600V-0.65ohm-10A TO-220/FP/D2PAK/I2PAK/TO-247 Zener-Protected SuperMESHPower MOSFET
N-CHANNEL 600V - 0.65 OHM - 10A TO-220/TO-220FP/D2PAK/I2PAK/TO-247 ZENER-PROTECTED SUPERMESH POWER MOSFET
|
STMicroelectronics N.V.
ST Microelectronics
|
| 15ETL06FPPBF 15ETH06FPPBF F06FPPBF |
Diode Switching 600V 15A 2-Pin(2 Tab) TO-220 Full-Pak Tube
Diode Switching 600V 10A 2-Pin(2 Tab) TO-220AC
|
Vishay Semiconductors
|
| IRFBC40S IRFBC40L IRFBC40STRR IRFBC40STRL |
600V Single N-Channel HEXFET Power MOSFET in a TO-262 package
600V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
Power MOSFET(Vdss=600V, Rds(on)=1.2ohm, Id=6.2A)
Power MOSFET(Vdss=600V Rds(on)=1.2ohm Id=6.2A)
CAP CER 1500PF 100V 20% X7R 0603 功率MOSFET（减振钢板基本\u003d 600V电压的Rds（on）\u003d 1.2ohm，身份证\u003d 6.2A
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| IRFBC40AS IRFBC40ASTRL IRFBC40ASTRR |
600V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
Power MOSFET(Vdss=600V, Rds(on)max=1.2ohm, Id=6.2A) 功率MOSFET（减振钢板基本\u003d 600V电压的Rds（on）最大值\u003d 1.2ohm，身份证\u003d 6.2A
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| IRFBC30S IRFBC30L |
600V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
600V Single N-Channel HEXFET Power MOSFET in a TO-262 package
Power MOSFET(Vdss=600V, Rds(on)=2.2ohm, Id=3.6A)
|
IRF[International Rectifier]
|
| 10N60Z |
10A 600V N-CHANNEL POWER MOSFET
|
UNISONIC TECHNOLOGIES
|
| BTA10-600B BTA10-600BW BTA10-600C BTA10-600CW BTA1 |
10A triac, 600V
Shell Style:Straight Plug; Circular Contact Gender:Pin; Insert Arrangement:22-55
10A TRIACS 10A条双向可控硅
10A triac, 800V
|
SGS Thomson Microelectronics
ST Microelectronics
意法半导
STMicroelectronics N.V.
|
| TFF10N60 |
N-Channel Power MOSFET 10A, 600V, 0.75Ω
|
Tak Cheong Electronics (Holdings) Co.,Ltd
|
| SSH10N60A |
BV(dss): 600V / R(ds): 0.8Ohm / I(d): 10A / advanced power MOSFET
|
Fairchild Semiconductor
|
| STP10NK60Z_FP W10NK60Z B10NK60Z B10NK60Z-1 P10NK60 |
N-channel 600V - 0.65OHM - 10A - I2/D2PAK - TO-220/FP - TO-247 Zener-protected SuperMESH TM Power MOSFET
|
STMICROELECTRONICS[STMicroelectronics]
|
| STP10NK60Z/FP |
N-channel 600V - 0.65OHM - 10A - I2/D2PAK - TO-220/FP - TO-247 Zener-protected SuperMESH TM Power MOSFET
|
意法半导
|
| IRG4BC20WS IRG4BC20W-S IRG4BC20W-STRR IRG4BC20W-ST |
600V Warp 60-150 kHz Discrete IGBT in a D2-Pak package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.16V, @Vge=15V, Ic=6.5A)
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 13A I(C) | TO-263AB
|
IRF[International Rectifier]
|
